Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
Identifieur interne : 000055 ( Russie/Analysis ); précédent : 000054; suivant : 000056Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
Auteurs : RBID : Pascal:11-0385979Descripteurs français
- Pascal (Inist)
- Microscopie tunnel balayage, Spectrométrie photoélectron, Calcul ab initio, Rayonnement synchrotron, Reconstruction surface, Structure surface, Monocristal, Composé binaire, Arséniure de gallium, Semiconducteur, Arséniure d'indium, As Ga, GaAs, As In, InAs, Composé minéral, Composé de métal de transition.
- Wicri :
- concept : Composé minéral.
English descriptors
- KwdEn :
Abstract
Tin (Sn) induced (1 x2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1x4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1x2) reconstruction, and it is shown that the (1 × 4) reconstruction is stabilized as the adatom size increases.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations</title><author><name sortKey="Ling, J J K" uniqKey="Ling J">J. J. K. Ling</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>16 aut.</sZ><sZ>19 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation></author><author><name sortKey="Laukkanen, P" uniqKey="Laukkanen P">P. Laukkanen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>16 aut.</sZ><sZ>19 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Optoelectronic Research Centre, Tampere University of Technology</s1><s2>3310 Tampere</s2><s3>FIN</s3><sZ>2 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>3310 Tampere</wicri:noRegion></affiliation></author><author><name sortKey="Punkkinen, M P J" uniqKey="Punkkinen M">M. P. J. Punkkinen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>16 aut.</sZ><sZ>19 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Applied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology</s1><s2>10044 Stockholm</s2><s3>SWE</s3><sZ>3 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>10044 Stockholm</wicri:noRegion></affiliation></author><author><name sortKey="Ahola Tuomi, M" uniqKey="Ahola Tuomi M">M. Ahola-Tuomi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>16 aut.</sZ><sZ>19 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation></author><author><name sortKey="Kuzmin, M" uniqKey="Kuzmin M">M. Kuzmin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>16 aut.</sZ><sZ>19 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Ioffe Physical-Technical Institute of the Russian Academy of Sciences</s1><s2>St Petersburg 194021</s2><s3>RUS</s3><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physical-Technical Institute of the Russian Academy of Sciences</wicri:noRegion></affiliation></author><author><name sortKey="Tuominen, V" uniqKey="Tuominen V">V. Tuominen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>16 aut.</sZ><sZ>19 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation></author><author><name sortKey="Dahl, J" uniqKey="Dahl J">J. Dahl</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>16 aut.</sZ><sZ>19 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation></author><author><name sortKey="Tuominen, M" uniqKey="Tuominen M">M. Tuominen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>16 aut.</sZ><sZ>19 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation></author><author><name sortKey="Per L, R E" uniqKey="Per L R">R. E. Per L</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>16 aut.</sZ><sZ>19 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation></author><author><name sortKey="Schulte, K" uniqKey="Schulte K">K. Schulte</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>MAX-lab, Lund University</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00 Lund</wicri:noRegion></affiliation></author><author><name sortKey="Adell, J" uniqKey="Adell J">J. Adell</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>MAX-lab, Lund University</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00 Lund</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Department of Applied Physics, Chalmers University of Technology</s1><s2>41296 Göteborg</s2><s3>SWE</s3><sZ>11 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>41296 Göteborg</wicri:noRegion></affiliation></author><author><name sortKey="Sadowski, J" uniqKey="Sadowski J">J. Sadowski</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>MAX-lab, Lund University</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00 Lund</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="07"><s1>Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46</s1><s2>02-668 Warszawa</s2><s3>POL</s3><sZ>12 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>02-668 Warszawa</wicri:noRegion></affiliation></author><author><name sortKey="Kanski, J" uniqKey="Kanski J">J. Kanski</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Department of Applied Physics, Chalmers University of Technology</s1><s2>41296 Göteborg</s2><s3>SWE</s3><sZ>11 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>41296 Göteborg</wicri:noRegion></affiliation></author><author><name sortKey="Guina, M" uniqKey="Guina M">M. Guina</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Optoelectronic Research Centre, Tampere University of Technology</s1><s2>3310 Tampere</s2><s3>FIN</s3><sZ>2 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>3310 Tampere</wicri:noRegion></affiliation></author><author><name sortKey="Pessa, M" uniqKey="Pessa M">M. Pessa</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Optoelectronic Research Centre, Tampere University of Technology</s1><s2>3310 Tampere</s2><s3>FIN</s3><sZ>2 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>3310 Tampere</wicri:noRegion></affiliation></author><author><name sortKey="Kokko, K" uniqKey="Kokko K">K. Kokko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>16 aut.</sZ><sZ>19 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation></author><author><name sortKey="Johansson, B" uniqKey="Johansson B">B. Johansson</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Applied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology</s1><s2>10044 Stockholm</s2><s3>SWE</s3><sZ>3 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>10044 Stockholm</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="08"><s1>Condensed Matter Theory Group, Physics Department, Uppsala University</s1><s2>75121 Uppsala</s2><s3>SWE</s3><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>75121 Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Vitos, L" uniqKey="Vitos L">L. Vitos</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Applied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology</s1><s2>10044 Stockholm</s2><s3>SWE</s3><sZ>3 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>10044 Stockholm</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="08"><s1>Condensed Matter Theory Group, Physics Department, Uppsala University</s1><s2>75121 Uppsala</s2><s3>SWE</s3><sZ>17 aut.</sZ><sZ>18 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>75121 Uppsala</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="09"><s1>Research Institute for Solid State Physics and Optics, P.O. Box 49</s1><s2>1525 Budapest</s2><s3>HUN</s3><sZ>18 aut.</sZ></inist:fA14><country>Hongrie</country><placeName><settlement type="city">Budapest</settlement><region nuts="2">Hongrie centrale</region></placeName></affiliation></author><author><name sortKey="V Yrynen, I J" uniqKey="V Yrynen I">I. J V Yrynen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>16 aut.</sZ><sZ>19 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0385979</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0385979 INIST</idno><idno type="RBID">Pascal:11-0385979</idno><idno type="wicri:Area/Main/Corpus">002B06</idno><idno type="wicri:Area/Main/Repository">002235</idno><idno type="wicri:Area/Russie/Extraction">000055</idno></publicationStmt><seriesStmt><idno type="ISSN">0039-6028</idno><title level="j" type="abbreviated">Surf. sci.</title><title level="j" type="main">Surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ab initio calculations</term><term>Binary compounds</term><term>Gallium arsenides</term><term>Indium arsenides</term><term>Inorganic compounds</term><term>Monocrystals</term><term>Photoelectron spectroscopy</term><term>Scanning tunneling microscopy</term><term>Semiconductor materials</term><term>Surface reconstruction</term><term>Surface structure</term><term>Synchrotron radiation</term><term>Transition element compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Microscopie tunnel balayage</term><term>Spectrométrie photoélectron</term><term>Calcul ab initio</term><term>Rayonnement synchrotron</term><term>Reconstruction surface</term><term>Structure surface</term><term>Monocristal</term><term>Composé binaire</term><term>Arséniure de gallium</term><term>Semiconducteur</term><term>Arséniure d'indium</term><term>As Ga</term><term>GaAs</term><term>As In</term><term>InAs</term><term>Composé minéral</term><term>Composé de métal de transition</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Tin (Sn) induced (1 x2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1x4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1x2) reconstruction, and it is shown that the (1 × 4) reconstruction is stabilized as the adatom size increases.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0039-6028</s0></fA01><fA02 i1="01"><s0>SUSCAS</s0></fA02><fA03 i2="1"><s0>Surf. sci.</s0></fA03><fA05><s2>605</s2></fA05><fA06><s2>9-10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations</s1></fA08><fA11 i1="01" i2="1"><s1>LING (J. J. K.)</s1></fA11><fA11 i1="02" i2="1"><s1>LAUKKANEN (P.)</s1></fA11><fA11 i1="03" i2="1"><s1>PUNKKINEN (M. P. J.)</s1></fA11><fA11 i1="04" i2="1"><s1>AHOLA-TUOMI (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>KUZMIN (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>TUOMINEN (V.)</s1></fA11><fA11 i1="07" i2="1"><s1>DAHL (J.)</s1></fA11><fA11 i1="08" i2="1"><s1>TUOMINEN (M.)</s1></fA11><fA11 i1="09" i2="1"><s1>PERÄLÄ (R. E.)</s1></fA11><fA11 i1="10" i2="1"><s1>SCHULTE (K.)</s1></fA11><fA11 i1="11" i2="1"><s1>ADELL (J.)</s1></fA11><fA11 i1="12" i2="1"><s1>SADOWSKI (J.)</s1></fA11><fA11 i1="13" i2="1"><s1>KANSKI (J.)</s1></fA11><fA11 i1="14" i2="1"><s1>GUINA (M.)</s1></fA11><fA11 i1="15" i2="1"><s1>PESSA (M.)</s1></fA11><fA11 i1="16" i2="1"><s1>KOKKO (K.)</s1></fA11><fA11 i1="17" i2="1"><s1>JOHANSSON (B.)</s1></fA11><fA11 i1="18" i2="1"><s1>VITOS (L.)</s1></fA11><fA11 i1="19" i2="1"><s1>VÄYRYNEN (I. J)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>16 aut.</sZ><sZ>19 aut.</sZ></fA14><fA14 i1="02"><s1>Optoelectronic Research Centre, Tampere University of Technology</s1><s2>3310 Tampere</s2><s3>FIN</s3><sZ>2 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></fA14><fA14 i1="03"><s1>Applied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology</s1><s2>10044 Stockholm</s2><s3>SWE</s3><sZ>3 aut.</sZ><sZ>17 aut.</sZ><sZ>18 aut.</sZ></fA14><fA14 i1="04"><s1>Ioffe Physical-Technical Institute of the Russian Academy of Sciences</s1><s2>St Petersburg 194021</s2><s3>RUS</s3><sZ>5 aut.</sZ></fA14><fA14 i1="05"><s1>MAX-lab, Lund University</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></fA14><fA14 i1="06"><s1>Department of Applied Physics, Chalmers University of Technology</s1><s2>41296 Göteborg</s2><s3>SWE</s3><sZ>11 aut.</sZ><sZ>13 aut.</sZ></fA14><fA14 i1="07"><s1>Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46</s1><s2>02-668 Warszawa</s2><s3>POL</s3><sZ>12 aut.</sZ></fA14><fA14 i1="08"><s1>Condensed Matter Theory Group, Physics Department, Uppsala University</s1><s2>75121 Uppsala</s2><s3>SWE</s3><sZ>17 aut.</sZ><sZ>18 aut.</sZ></fA14><fA14 i1="09"><s1>Research Institute for Solid State Physics and Optics, P.O. Box 49</s1><s2>1525 Budapest</s2><s3>HUN</s3><sZ>18 aut.</sZ></fA14><fA20><s1>883-888</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12426</s2><s5>354000192896520080</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>27 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0385979</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Surface science</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Tin (Sn) induced (1 x2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1x4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1x2) reconstruction, and it is shown that the (1 × 4) reconstruction is stabilized as the adatom size increases.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Microscopie tunnel balayage</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Scanning tunneling microscopy</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Spectrométrie photoélectron</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Photoelectron spectroscopy</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Calcul ab initio</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Ab initio calculations</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Rayonnement synchrotron</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Synchrotron radiation</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Reconstruction surface</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Surface reconstruction</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Structure surface</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Surface structure</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Monocristal</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Monocrystals</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Composé binaire</s0><s5>15</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Binary compounds</s0><s5>15</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>17</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>17</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>As Ga</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>33</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>34</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>35</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Composé minéral</s0><s5>62</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>62</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Composé de métal de transition</s0><s5>63</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Transition element compounds</s0><s5>63</s5></fC03><fN21><s1>262</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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|texte= Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
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